Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 46: 2D Materials beyond Graphene: TMDCs, Slicene and Relatives

O 46.2: Poster

Dienstag, 8. März 2016, 18:15–20:30, Poster E

Characterization of few layer MoS₂ on Silicon Carbide with Raman Spectroscopy — •Lisa Seitz¹, Adrian Schütze², Gregor Nordheim², Thomas Seyller², and Martin Hundhausen¹ — ¹Lehrstuhl für Laserphysik, FAU Erlangen-Nürnberg — ²Professur für Technische Physik, Technische Universität Chemnitz

MoS₂ is a layered crystal with electronic properties that depend significantly on the number of layers. Here, we employ Raman spectroscopy for a mapping of layer number and homogeneity of few layer MoS₂, synthesized by CVD on silicon carbide (SiC). The frequencies of the E_2g¹ and A_1g phonon modes depend on the layer number, so that the difference between these frequencies can be used as an indicator of layer number. [1] Different samples were studied by a Raman mapping: One sample shows a domain structure of terraces covered with bi- and trilayer MoS₂, coexisting with clean surface domains. Another sample shows a rather homogeneous coverage of MoS₂ with a layer number of around four to five.

J. Jeon et al., Nanoscale 7, 1688 (2015).