Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 83: Heterostructures and Interfaces
O 83.8: Talk
Thursday, March 10, 2016, 11:45–12:00, H17
Photoelectrochemical investigation of TiO2-coated InGaN/GaN nanowires under visible light irradiation — •Paula Neuderth1, Adina Frank1, Pascal Hille1, Christian Reitz2, Jörg Teubert1, Jörg Schörmann1, Roland Marschall3, and Martin Eickhoff1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany — 2Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany — 3Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany
Composite structures of InGaN/GaN nanowire heterostructures with a thin anatase titania coverage were prepared by combination of molecular beam epitaxy and atomic layer deposition and investigated with respect to their photoelectrochemical properties. The bandgap of InGaN can be adjusted in the visible regime which makes it suitable for solar-driven photocatalytic reactions such as solar water splitting. In these nanocomposite structures an anodic photocurrent under visible excitation was gained. However, the presence of a thin (2 - 10 nm) anatase titania film increases the photocurrent significantly although direct generation of carriers in the titania is not possible. The influence of the titania coating on charge separation, charge transfer and surface recombination will be discussed by comparison to photoluminescence measurements in electrochemical environment.