Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Quantum Dots: Optical Properties I
HL 33.10: Talk
Tuesday, March 21, 2017, 12:30–12:45, POT 81
Bulk AlInAs on InP(111) as a novel material system for pure single photon emission — •Michael Deppisch1, Sebastian Unsleber1, Christian M. Krammel2, Minh Vo1, Christopher D. Yerino3, Paul J. Simmonds4, Minjoo Larry Lee3,5, Paul M. Koenraad2, Christian Schneider1, and Sven Hoefling1,6 — 1Technische Physik and Wilhelm Conrad Roentgen Research Center for Complex Material Systems, Physikalisches Institut, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany — 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ, The Netherlands — 3Department of Electrical Engineering, Yale University, PO Box 208284, New Haven, CT 06520, USA — 4Boise State University, Departments of Physics and Materials Science and Engineering, Boise, ID 83725, USA — 5Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA — 6SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, UK
We report on quantum light emission from bulk AlInAs grown on InP(111) substrates. Indium rich clusters in the bulk Al0.48In0.52As (AlInAs) were observed, resulting in quantum dot (QD)-like energetic traps for charge carriers. QD-like emission signals appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. Moreover, single photon emission is demonstrated as we extract g(2)-values as low as gcw(2)(0) = 0.05 for continuous wave excitation and gpulsed, corr2(0) = 0.24 for pulsed excitation.