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HL: Fachverband Halbleiterphysik

HL 33: Quantum Dots: Optical Properties I

HL 33.10: Vortrag

Dienstag, 21. März 2017, 12:30–12:45, POT 81

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission — •Michael Deppisch¹, Sebastian Unsleber¹, Christian M. Krammel², Minh Vo¹, Christopher D. Yerino³, Paul J. Simmonds⁴, Minjoo Larry Lee^3,5, Paul M. Koenraad², Christian Schneider¹, and Sven Hoefling^1,6 — ¹Technische Physik and Wilhelm Conrad Roentgen Research Center for Complex Material Systems, Physikalisches Institut, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany — ²Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ, The Netherlands — ³Department of Electrical Engineering, Yale University, PO Box 208284, New Haven, CT 06520, USA — ⁴Boise State University, Departments of Physics and Materials Science and Engineering, Boise, ID 83725, USA — ⁵Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA — ⁶SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, UK

We report on quantum light emission from bulk AlInAs grown on InP(111) substrates. Indium rich clusters in the bulk Al_0.48In_0.52As (AlInAs) were observed, resulting in quantum dot (QD)-like energetic traps for charge carriers. QD-like emission signals appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. Moreover, single photon emission is demonstrated as we extract g⁽²⁾-values as low as g_cw⁽²⁾(0) = 0.05 for continuous wave excitation and g_{pulsed, corr}²(0) = 0.24 for pulsed excitation.