Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.2: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Silicon Acousto-Electronics: Requirements for Ultrahigh-Frequencies — •Robert Ukropec1, Boris Vratzov2, Daan Kooij1, Paulo V. Santos3, and Wilfred G. van der Wiel1 — 1NanoElectronics Group (NE), MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. — 2NT&D - Nanotechnology & Devices, Aachen, Germany. — 3Department of Semiconductor Spectroscopy, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
Acousto-electronic transport and phonon cavities generated by surface acoustic waves (SAWs) are playing a central role in the rapidly emerging field of quantum acoustics, a phonon analogue of quantum optics on a chip. To enter the quantum regime, both ultrahigh-frequency (UHF, >10 GHz) SAWs and suitable host materials are indispensable. So far, research in this field has mainly concentrated on GaAs-based substrates. We investigate silicon, which is attractive for its long spin lifetimes and thus, for the interconnectivity of qubits via SAWs generated by piezoelectric multilayers. Integration of UHF-SAW technology with these structures for carrier and spin transport is our motivation. UHFs are achieved via small SAW wavelength (down to 260 nm) transducers fabricated by nano-imprint lithography. We compare numerical simulations and experimental network analysis of piezoelectric multilayers on Si to evaluate these material systems for application in quantum acousto-electronic transport.