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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.2: Poster

Dienstag, 13. März 2018, 18:15–20:15, Poster B

Silicon Acousto-Electronics: Requirements for Ultrahigh-Frequencies — •Robert Ukropec¹, Boris Vratzov², Daan Kooij¹, Paulo V. Santos³, and Wilfred G. van der Wiel¹ — ¹NanoElectronics Group (NE), MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. — ²NT&D - Nanotechnology & Devices, Aachen, Germany. — ³Department of Semiconductor Spectroscopy, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.

Acousto-electronic transport and phonon cavities generated by surface acoustic waves (SAWs) are playing a central role in the rapidly emerging field of quantum acoustics, a phonon analogue of quantum optics on a chip. To enter the quantum regime, both ultrahigh-frequency (UHF, >10 GHz) SAWs and suitable host materials are indispensable. So far, research in this field has mainly concentrated on GaAs-based substrates. We investigate silicon, which is attractive for its long spin lifetimes and thus, for the interconnectivity of qubits via SAWs generated by piezoelectric multilayers. Integration of UHF-SAW technology with these structures for carrier and spin transport is our motivation. UHFs are achieved via small SAW wavelength (down to 260 nm) transducers fabricated by nano-imprint lithography. We compare numerical simulations and experimental network analysis of piezoelectric multilayers on Si to evaluate these material systems for application in quantum acousto-electronic transport.