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DS: Fachverband Dünne Schichten
DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I
DS 3.9: Talk
Monday, March 12, 2018, 11:45–12:00, E 020
Epitaxial Stabilization of NbO2 on TiO2(110) — •Jos Emiel Boschker1, Saud Bin Anooz1,2, Benjamin Kalas3, Toni Markurt1, Manfred Ramsteiner4, Sverre Vegard Pettersen5, Jostein Kvaal Grepstad5, Martin Albrecht1, Péter Petrik3, and Jutta Schwarzkopf1 — 1Leibniz Institute for Crystal Growth, Max-Born-Str. 2, Berlin, D-12489, Germany — 2Physics Department, Faculty of Science, Hadhramout University, Mukalla, 50511, Yemen — 3Institute of Technical Physics and Materials Science, Konkoly-Thege Rd. 29-33, 1121 Budapest, Hungary — 4Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany — 5Department of Electronic Systems, Norwegian University of Science and Technology, Trondheim, Norway
Niobium oxides have promising physical properties that can be exploited in electronic devices, such as selector and memory devices. Moreover, NbO2 has attracted considerable scientific interest, as it exhibits a semiconductor-metal transition at 1080K. However, the lack of high quality material complicates fundamental studies of their properties. In this paper, we report on the epitaxial stabilization of NbO2 thin films grown on TiO2 substrates by pulsed laser deposition. The anisotropic properties of films grown at different substrate temperatures were determined by various structural and optical methods. The results indicate a phase transition from the rutile structure to a distorted rutile structure with decreasing substrate temperature.