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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.28: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Intermediate band solar cells - Characterization of transition metal doped indium sulfide — •Ron Hildebrandt¹, Tanja Jawinski², Leonard Wägele², Holger von Wenckstern¹, Roland Scheer², and Marius Grundmann¹ — ¹Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany — ²Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, Von-Dankelmann-Platz 3, 06120 Halle, Germany

The Shockley-Queisser limit for solar cell efficiency of 33.7% is based on a trade-off between generated photocurrent and photovoltage [1]. Intermediate band (IB) solar cells are proposed to overcome this trade-off by an additional two step photon absorption via states within the band gap [2]. Those states may be realized by quantum dots, band anti-crossing in highly mismatched alloys or deep level impurities.

In this work we present a deep level impurity approach for IB solar cells. The heterostructure is p-ZnCo₂O₄/i-In₂S₃/n-ZnO:Al with Au contacts on each side. The transition metal doped In₂S₃ absorber material is deposited by thermal co-evaporation. ZnCo₂O₄ is deposited by pulsed laser deposition and ZnO:Al by HF-sputtering.

The devices were characterized by current voltage, thermal admittance spectroscopy, photocurrent and transmission measurements, as well as atomic force microscopy. The solar cells showed rectification of 3.5 orders of magnitude and a clear photovoltaic response.

[1] W. Shockley, H. J. Queisser: J. Appl. Phys., 32(3):510-519, 1961.

[2] A. Luque, A. Martí: Phys. Rev. Lett., 78(26):5014-5017, 1997.