Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Quantum dots and wires: Optical properties II
HL 32.3: Talk
Wednesday, March 14, 2018, 15:30–15:45, A 151
GaN Nanowires for Optoelectronic Control of Nitrogen Vacancy Centers in Diamond — •Theresa Hoffmann1, Martin Hetzl1, Jakob Wierzbowski1, Max Kraut1, Verena Zuerbig2, Christoph E. Nebel2, Jonathan J. Finley1, and Martin Stutzmann1 — 1Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany — 2Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Freiburg, Germany
Nitrogen vacancy centers (NVs) are color centers in diamond with highest coherence times of their excited states which makes them promising candidates for quantum computing applications. However, charge state instabilities of surface-near NVs lead to optical blinking and spin state instabilities. Moreover, the high refractive index of diamond is unfavorable for their optical read-out.
We demonstrate an efficient method for the optical read-out of the NVs via GaN nanowire (NW) arrays as optical waveguides. Selective area growth of n-GaN NW arrays on a i-p-diamond (111) by molecular beam epitaxy allows the variation of the NW dimensions and position. Numerical simulations of the light propagation have been performed to optimize these parameters to obtain a maximum extraction efficiency of the NV PL signal through the NW array. In addition, p-i-diamond/n-GaN nano diodes have been implemented to stabilize and control the NV charge state via an externally applied voltage.