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HL: Fachverband Halbleiterphysik

HL 32: Quantum dots and wires: Optical properties II

HL 32.3: Vortrag

Mittwoch, 14. März 2018, 15:30–15:45, A 151

GaN Nanowires for Optoelectronic Control of Nitrogen Vacancy Centers in Diamond — •Theresa Hoffmann¹, Martin Hetzl¹, Jakob Wierzbowski¹, Max Kraut¹, Verena Zuerbig², Christoph E. Nebel², Jonathan J. Finley¹, and Martin Stutzmann¹ — ¹Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany — ²Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Freiburg, Germany

Nitrogen vacancy centers (NVs) are color centers in diamond with highest coherence times of their excited states which makes them promising candidates for quantum computing applications. However, charge state instabilities of surface-near NVs lead to optical blinking and spin state instabilities. Moreover, the high refractive index of diamond is unfavorable for their optical read-out.

We demonstrate an efficient method for the optical read-out of the NVs via GaN nanowire (NW) arrays as optical waveguides. Selective area growth of n-GaN NW arrays on a i-p-diamond (111) by molecular beam epitaxy allows the variation of the NW dimensions and position. Numerical simulations of the light propagation have been performed to optimize these parameters to obtain a maximum extraction efficiency of the NV PL signal through the NW array. In addition, p-i-diamond/n-GaN nano diodes have been implemented to stabilize and control the NV charge state via an externally applied voltage.