Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.9: Poster
Thursday, March 15, 2018, 19:00–21:00, Poster B
Effects of crystal annealing on the spin coherence time in silicon carbide — •Daniel Klenkert1, Christian Kasper1, Georgy V. Astakhov1, Ingo Lederer2, and Vladimir Dyakonov1,2 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg
The silicon vaccancy defect (VSi) in silicon carbide (SiC) has recently emerged as a topic of research interest because of its coherent properties. The VSi center forms a S=3/2 system, which can be extensivly controlled by infrared and microwave radiation. Additonally, the VSi defect shows spin coherence times on the order of several hundred microseconds at room temperature. Therefore the use of this defect in quantum sensing and quantum computing applications seems realistic. The defects are usually created by irradiation, which in turn impairs the coherent properties.
In this study, we examine the effects of crystal annealing on the spin-lattice relaxation time T1 and the spin-spin relaxation time T2 of the VSi defect. The silicon vaccancy is stable and, in contrast to some other crystal defects, can only be anneald at high temperatures. This gives rise to the hope, that annealing at lower temperatures yields a better orderd crystal with longer coherence times.