Berlin 2018 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 21: Poster I

MA 21.57: Poster

Dienstag, 13. März 2018, 09:30–13:00, Poster A

Structural characterization of hexagonal Mn₃X (X = Ga, Ge, Sn) thin films — •Philipp Zilske¹, Jungwoo Koo¹, Samer Kurdi², and Günter Reiss¹ — ¹Center for Spinelectronic Materials and Devices, Bielefeld University, Germany — ²Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

In the last decade, antiferromagnetic spintronics has established as an important field for future magnetic storage devices [1]. Recently, non-collinear antiferromagnets received much attention due to their promising electronic properties. Theoretical calculations as well as first experimental results show large anomalous Hall effect for hexagonal non-collinear antiferromagnets Mn₃X (X = Ga, Ge, Sn). However, such properties are only studied for single crystalline bulk samples [2-4].

Here, we report on the structural analysis of Mn₃X (X = Ga, Ge, Sn) thin films. Epitaxial Mn₃X films were grown via magnetron co-sputtering. The dependence of the crystalline quality on the deposition temperature and the stoichiometry, as well as the influence of the buffer layer was investigated by X-ray diffraction measurements.

Furthermore, we discuss the transport properties of several samples.

[1] T. Jungwirth et al., Nature Nanotech. 11, 231 (2016)

[2] Y. Zhang et al., Phys. Rev. B 95, 075128 (2017)

[3] S. Nakatsuji et al., Nature 527, 212 (2015)

[4] N. Kiyohara et al., Phys. Rev. Appl. 5, 064009 (2016)