Berlin 2018 – scientific programme
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MA: Fachverband Magnetismus
MA 21: Poster I
MA 21.57: Poster
Tuesday, March 13, 2018, 09:30–13:00, Poster A
Structural characterization of hexagonal Mn3X (X = Ga, Ge, Sn) thin films — •Philipp Zilske1, Jungwoo Koo1, Samer Kurdi2, and Günter Reiss1 — 1Center for Spinelectronic Materials and Devices, Bielefeld University, Germany — 2Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom
In the last decade, antiferromagnetic spintronics has established as an important field for future magnetic storage devices [1]. Recently, non-collinear antiferromagnets received much attention due to their promising electronic properties. Theoretical calculations as well as first experimental results show large anomalous Hall effect for hexagonal non-collinear antiferromagnets Mn3X (X = Ga, Ge, Sn). However, such properties are only studied for single crystalline bulk samples [2-4].
Here, we report on the structural analysis of Mn3X (X = Ga, Ge, Sn) thin films. Epitaxial Mn3X films were grown via magnetron co-sputtering. The dependence of the crystalline quality on the deposition temperature and the stoichiometry, as well as the influence of the buffer layer was investigated by X-ray diffraction measurements.
Furthermore, we discuss the transport properties of several samples.
[1] T. Jungwirth et al., Nature Nanotech. 11, 231 (2016)
[2] Y. Zhang et al., Phys. Rev. B 95, 075128 (2017)
[3] S. Nakatsuji et al., Nature 527, 212 (2015)
[4] N. Kiyohara et al., Phys. Rev. Appl. 5, 064009 (2016)