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MA: Fachverband Magnetismus
MA 52: Poster II
MA 52.58: Poster
Thursday, March 15, 2018, 15:00–18:00, Poster C
Inelastic electron tunneling spectroscopy at tunnel junctions with integrated topological material — •Denis Dyck1, Robin-Pierre Klett1, Andreas Becker1, Jan Haskenhoff1, Jan Krieft1, Karsten Rott1, Torsten Hübner1, Gregor Mussler2, Jan-Michael Schmalhorst1, Andreas Hütten1, and Günter Reiss1 — 1Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Bielefeld, Germany — 2Forschungszentrum Jülich, Peter-Grünberg Institut, Jülich, Germany
The research on topological insulators is evolving rapidly. Within less than a decade, experimental effort led from fundamental material analysis to first real topological devices exploiting physics for future spintronic applications. However, all data were taken at planar devices. For technical integration into applicable information architecture, devices based on vertical transport are required to achieve, e.g., scalability and low power consumption. Here, the successful patterning and integration of tunnel junctions based on topological back electrodes are a necessary way to go. Furthermore, different classes of topological matter are investigated: topological crystalline insulators, represented by SnTe thin films, BiSbTe as a topological insulator and Co2TiSi as a magnetic Weyl semimetal. In this work we report on the realization of such tunnel junctions consisting of aforementioned materials and their characterization using inelastic electron tunneling spectroscopy (IETS). Different excitations for different topological materials can be identified.