Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 43: Poster: Semiconductor Substrates - Adsorption
O 43.3: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Preparation and Characterization of a Monolayer Thallium on Si(110) — •Pascal Grenz1, Philipp Eickholt1, Anke Beck-Schmidt1, Koji Miyamoto2, Kazuyuki Sakamoto3, and Markus Donath1 — 1Instiute of Physics, Westfälische-Wilhelms-Universität Münster, Germany — 2Hiroshima Synchroton Radiation Centre, Japan — 3Department of Nanomaterials Science, Chiba University, Japan
Surface states of thin thallium layers on Si(111) are strongly influenced by spin-orbit-interaction leading to peculiar spin textures [1]. A further interesting example is the Tl/Si(110)-(1x1) surface, where a nonvortical Rashba spin structure was observed in the occupied electronic states at k-points with C1h symmetry [2]. For the unoccupied states, a large spin splitting is predicted along Γ X with an out-of-plane spin polarization. A well-prepared surface is crucial for the investigation of the surface bands. In this contribution, we report on different preparation methods and discuss their influence on the crystallographic and electronic surface structure.
[1] S.D. Stolwijk et al., Phys. Rev. Materials 1, 064604 (2017)
[2] E. Annese et al., Phys. Rev. Lett. 117, 016803 (2016)