Berlin 2018 – scientific programme

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O: Fachverband Oberflächenphysik

O 43: Poster: Semiconductor Substrates - Adsorption

O 43.3: Poster

Tuesday, March 13, 2018, 18:15–20:30, Poster A

Preparation and Characterization of a Monolayer Thallium on Si(110) — •Pascal Grenz¹, Philipp Eickholt¹, Anke Beck-Schmidt¹, Koji Miyamoto², Kazuyuki Sakamoto³, and Markus Donath¹ — ¹Instiute of Physics, Westfälische-Wilhelms-Universität Münster, Germany — ²Hiroshima Synchroton Radiation Centre, Japan — ³Department of Nanomaterials Science, Chiba University, Japan

Surface states of thin thallium layers on Si(111) are strongly influenced by spin-orbit-interaction leading to peculiar spin textures [1]. A further interesting example is the Tl/Si(110)-(1x1) surface, where a nonvortical Rashba spin structure was observed in the occupied electronic states at k-points with C_1h symmetry [2]. For the unoccupied states, a large spin splitting is predicted along Γ X with an out-of-plane spin polarization. A well-prepared surface is crucial for the investigation of the surface bands. In this contribution, we report on different preparation methods and discuss their influence on the crystallographic and electronic surface structure.

[1] S.D. Stolwijk et al., Phys. Rev. Materials 1, 064604 (2017)

[2] E. Annese et al., Phys. Rev. Lett. 117, 016803 (2016)