Berlin 2018 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 89: Oxide and Insulator Surfaces: Structure, Epitaxy and Growth I

O 89.3: Vortrag

Donnerstag, 15. März 2018, 11:00–11:15, MA 041

Pulsed laser deposition of In₂O₃ thin films on YSZ(111) — •Michele Riva¹, Giada Franceschi¹, Jakob Hofinger¹, Margareta Wagner^{1, 2}, and Ulrike Diebold¹ — ¹IAP, TU Wien — ²FAU Erlangen-Nürnberg

In₂O₃ is a wide band-gap, transparent conductive oxide whose applications include optoelectronics, gas sensing, and catalytic fuel production. In all these applications In₂O₃ surfaces and their nanoscale properties play a key role, and atomic-scale investigations to unravel such properties require suitable single-crystalline model systems. However, In₂O₃ single crystals are not commercially available, and synthetically grown ones are usually very small. While this is not critical for scanning probe techniques, area-averaging techniques such as TPD and XPS require larger samples. To this purpose, we have grown well-ordered and atomically flat In₂O₃(111) thin films - with a thickness of a few hundred nanometers - onto YSZ(111) substrates by PLD. Their structure, chemical composition and morphology were characterized by RHEED, LEED, XRD, XPS, AFM, and STM. By optimizing the growth parameters, we could obtain In₂O₃(111) films exhibiting properties comparable to the best single crystals available, exhibiting atomically-flat terraces a few hundred nanometers wide, separated by monoatomic steps. The films behave like In₂O₃ single crystals, down to the atomic scale, and thus allow the combination of atomic-scale surface-science analysis and the investigation of, e.g., the electronic structure and the reactivity of their surfaces via area averaging spectroscopic techniques.