Berlin 2018 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 43: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session O/TT)
TT 43.4: Talk
Tuesday, March 13, 2018, 11:30–11:45, MA 043
Partial dislocations in bilayer graphene — •Reena Gupta1, Heiko Weber2, and Sam Shallcross1 — 1Theoretische Festkörperphysik, FAU Erlangen-Nürnberg, Staudtstrasse 7/B2, 91058 Erlangen, Germany — 2Angewandte Physik, FAU Erlangen-Nürnberg, Staudtstrasse 7, 91058 Erlangen, Germany
We study the bernal stacked bilayer in the presence of symmetry lowering networks of partial dislocations. We find that the transport state of the bilayer is essentially determined by the structure of the partial dislocation network, which may result in both a minimal conductivity i.e., the appearance of a pristine bilayer, as well as an insulating phase [1]. We consider both an ideal model of straight partials, which reveals the essential physics, as well as more complex networks of wandering partials. Finally, we examine the topological edge states that exist at the partial dislocation edge, and examine their behaviour in the presence of an applied magnetic field.
[1] S. Shallcross et al., Nature Communications 8, 342 (2017).