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TT: Fachverband Tiefe Temperaturen

TT 43: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session O/TT)

TT 43.4: Vortrag

Dienstag, 13. März 2018, 11:30–11:45, MA 043

Partial dislocations in bilayer graphene — •Reena Gupta¹, Heiko Weber², and Sam Shallcross¹ — ¹Theoretische Festkörperphysik, FAU Erlangen-Nürnberg, Staudtstrasse 7/B2, 91058 Erlangen, Germany — ²Angewandte Physik, FAU Erlangen-Nürnberg, Staudtstrasse 7, 91058 Erlangen, Germany

We study the bernal stacked bilayer in the presence of symmetry lowering networks of partial dislocations. We find that the transport state of the bilayer is essentially determined by the structure of the partial dislocation network, which may result in both a minimal conductivity i.e., the appearance of a pristine bilayer, as well as an insulating phase [1]. We consider both an ideal model of straight partials, which reveals the essential physics, as well as more complex networks of wandering partials. Finally, we examine the topological edge states that exist at the partial dislocation edge, and examine their behaviour in the presence of an applied magnetic field.

[1] S. Shallcross et al., Nature Communications 8, 342 (2017).