Erlangen 2018 – scientific programme
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A: Fachverband Atomphysik
A 25: Poster Session I
A 25.20: Poster
Tuesday, March 6, 2018, 16:15–18:15, Redoutensaal
K-shell photoionoization of Silicon ions — •Ticia Buhr1, Alexander Perry-Sassmannshausen1, Simon Reinwardt2, Sandor Ricz3, Michael Martins2, Alfred Müller4, and Stefan Schippers1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany — 2Institut für Experimentalphysik, Universität Hamburg, Germany — 3Institute for Nuclear Research, Hungarian Academy of Sciences, Debrecen, Hungary — 4Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Gießen, Germany
Absolute cross sections for single and multiple photoionization of low charged atomic silicon ions at the silicon K-edge have been experimentally determined. Such data are of immediate interest for x-ray astrophysics [1] and benchmark theoretical calculations. The measurements were carried out at the PIPE setup [2] at the beam line P04 on the synchrotron light source PETRA III (Hamburg, Germany) employing the photon-ion merged-beams technique. Precise K-shell ionization resonance parameters (positions, widths,...) for these ions and branching ratios for the production of the various product-ion charge states are provided.
[1] T. Holczer et al., Astrophys. J. 708, 981 (2010).
[2] S. Schippers et al., J. Phys. B 47, 115602 (2014).