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A: Fachverband Atomphysik

A 25: Poster Session I

A 25.20: Poster

Dienstag, 6. März 2018, 16:15–18:15, Redoutensaal

K-shell photoionoization of Silicon ions — •Ticia Buhr¹, Alexander Perry-Sassmannshausen¹, Simon Reinwardt², Sandor Ricz³, Michael Martins², Alfred Müller⁴, and Stefan Schippers¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany — ²Institut für Experimentalphysik, Universität Hamburg, Germany — ³Institute for Nuclear Research, Hungarian Academy of Sciences, Debrecen, Hungary — ⁴Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Gießen, Germany

Absolute cross sections for single and multiple photoionization of low charged atomic silicon ions at the silicon K-edge have been experimentally determined. Such data are of immediate interest for x-ray astrophysics [1] and benchmark theoretical calculations. The measurements were carried out at the PIPE setup [2] at the beam line P04 on the synchrotron light source PETRA III (Hamburg, Germany) employing the photon-ion merged-beams technique. Precise K-shell ionization resonance parameters (positions, widths,...) for these ions and branching ratios for the production of the various product-ion charge states are provided.
[1] T. Holczer et al., Astrophys. J. 708, 981 (2010).
[2] S. Schippers et al., J. Phys. B 47, 115602 (2014).