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DS: Fachverband Dünne Schichten

DS 4: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)

DS 4.1: Vortrag

Montag, 16. März 2020, 09:30–09:45, POT 81

Demonstration of a broadband Photodetector Based on a Two-Dimensional Metal-Organic Framework — •Himani Arora^1,2, Renhao Dong³, Tommaso Venanzi^1,2, Jens Zscharschuch¹, Harald Schneider¹, Manfred Helm^1,2, Xinliang Feng³, Enrique Cánovas⁴, and Artur Erbe¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany — ²Faculty of Physics & Center for Advancing Electronics Dresden, Technische Universität Dresden, 01062 Dresden, Germany — ³Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden, Technische Universität Dresden, 01062 Dresden, Germany — ⁴Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), 28049 Madrid, Spain

Electrically-conducting metal-organic frameworks (MOFs) have gained considerable attention in last years. In this regard, we report a novel semiconducting Fe3(THT)2(NH4)3 (THT, 2,3,6,7,10,11-triphenylenehexathiol) two-dimensional MOF. The developed MOF films reveal a free-charge band-like transport with a record-high Hall mobility of 230 cm2 V-1 s-1 at room temperature. We further demonstrate a proof-of-concept photodetector based on Fe3(THT)2(NH4)3 MOF films, operative in UV-to-NIR range. Due to IR bandgap of the MOF samples (0.45 eV), the photodetectors are best operated at cryogenic temperatures by suppressing the noise from thermally-activated charge carriers to obtain a clear signal from optically generated carries. Our work reports the first proof-of-concept MOF photodetector, revealing MOFs as promising candidates for optoelectronics.