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DS: Fachverband Dünne Schichten
DS 43: Thin Film Properties: Structure, Morphology and Composition II
DS 43.4: Vortrag
Donnerstag, 19. März 2020, 17:30–17:45, CHE 89
Important factors influencing the electrical properties of polycrystalline AZO thin films — •Petr Novák1, Tomáš Kozák2, Petra Šotová1, Lucie Prušáková1, and Rostislav Medlín1 — 1New Technologies - Research Centre, University of West Bohemia, Plzeň, Czech Republic — 2Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia, Plzeň, Czech Republic
The aluminium-doped zinc oxide (AZO) may have similar electrical and optical properties to more expensive Indium-tin oxide (ITO), which is mostly used material for transparent conductive electrodes. Nevertheless, it is difficult to obtain comparable conductivity at deposition temperatures below 100°C. The fundamental benefit of ITO films is good conductivity also in the nanocrystalline or amorphous phase. On the contrary, well crystalline structure is required to obtain suitable properties of AZO. The present work deals with investigation of the relation between electrical properties of AZO and the film structure observed by electron microscopy. The structural defects formed under different conditions such as grain boundary or basal edge dislocations were observed by SEM and TEM. In particular, the investigation focuses on the grain boundary scattering, which reduces the mobility of the free carriers. The work is also devoted to the influence of oxygen conditions on the carrier concertation, which corresponds to the presence of various intrinsic defects at oxygen poor and oxygen rich conditions.