Dresden 2020 – scientific programme

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DS: Fachverband Dünne Schichten

DS 43: Thin Film Properties: Structure, Morphology and Composition II

DS 43.4: Talk

Thursday, March 19, 2020, 17:30–17:45, CHE 89

Important factors influencing the electrical properties of polycrystalline AZO thin films — •Petr Novák¹, Tomáš Kozák², Petra Šotová¹, Lucie Prušáková¹, and Rostislav Medlín¹ — ¹New Technologies - Research Centre, University of West Bohemia, Plzeň, Czech Republic — ²Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia, Plzeň, Czech Republic

The aluminium-doped zinc oxide (AZO) may have similar electrical and optical properties to more expensive Indium-tin oxide (ITO), which is mostly used material for transparent conductive electrodes. Nevertheless, it is difficult to obtain comparable conductivity at deposition temperatures below 100°C. The fundamental benefit of ITO films is good conductivity also in the nanocrystalline or amorphous phase. On the contrary, well crystalline structure is required to obtain suitable properties of AZO. The present work deals with investigation of the relation between electrical properties of AZO and the film structure observed by electron microscopy. The structural defects formed under different conditions such as grain boundary or basal edge dislocations were observed by SEM and TEM. In particular, the investigation focuses on the grain boundary scattering, which reduces the mobility of the free carriers. The work is also devoted to the influence of oxygen conditions on the carrier concertation, which corresponds to the presence of various intrinsic defects at oxygen poor and oxygen rich conditions.