Dresden 2020 –
wissenschaftliches Programm
Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...
HL 68: Nitrides: Preparation and characterization II
Donnerstag, 19. März 2020, 15:00–16:45, POT 112
 |
15:00 |
HL 68.1 |
Impact of high free-carrier concentrations on optical properties of cubic GaN — •Elias Baron, Rüdiger Goldhahn, Michael Deppe, Donat J. As, and Martin Feneberg
|
|
|
|
15:15 |
HL 68.2 |
Absolute internal quantum efficiency of GaInN/GaN quantum wells under steady state conditions — •Savutjan Sidik, Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
|
|
|
|
15:30 |
HL 68.3 |
Size-effect of donors on the lattice parameters of wurtzite GaN — •Elias Kluth, Karsten Lange, Matthias Wienecke, Jürgen Bläsing, Hartmut Witte, Armin Dadgar, Rüdiger Goldhahn, and Martin Feneberg
|
|
|
|
15:45 |
HL 68.4 |
Electronic properties of ZnSi1−x−yGexSnyN2 semiconductors — •Masako Ogura, Dan Han, Monika Pointner, Laura Junkers, and Hubert Ebert
|
|
|
|
16:00 |
HL 68.5 |
Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks — •Hartmut Witte, Cleophace Seneza, Prabha Sana, Christoph Berger, Armin Dadgar, and André Strittmatter
|
|
|
|
16:15 |
HL 68.6 |
100% quantum efficiency in III-nitride quantum wells at low temperatures: experimental verification by time-resolved photoluminescence — •Philipp Henning, Savutjan Sidik, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
|
|
|
|
16:30 |
HL 68.7 |
V-groove patterning of 3C-SiC/Si(001) substrates for cubic GaN epitaxy — •Mario Littmann, Dirk Reuter, and Donat J. As
|
|
|
