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O: Fachverband Oberflächenphysik
O 10: Oxides I: Growth and Characterization
O 10.13: Vortrag
Montag, 16. März 2020, 13:30–13:45, WIL B321
Surface diffusion of precursors in area-selective Atomic Layer Deposition — •Daniel Anders1, Philip Klement1, Jörg Schörmann1, Christian Heiliger2, and Sangam Chatterjee1 — 1Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Germany — 2Institute of Theoretical Physics, Justus Liebig University Giessen, Germany
Bottom-up nanofabrication by area-selective Atomic Layer Deposition (ALD) is expected to become a key technology in the fabrication of sub 5-nm semiconductor-devices. ALD eliminates conventional top-down alignment errors by limiting the deposition to specific areas. Surface diffusion of precursors becomes important as precursors may adsorb to no-growth areas and diffuse towards growth areas leading to previously unconsidered phenomena.
Here we show the impact of precursor surface diffusion in area-selective ALD of TiO2 on SiO2. We find strongly increased growth rates on substrates with pattered poly(methyl methacrylate) masks and a non-uniform topography. We apply a kinetic Monte-Carlo simulation model for the growth process based on different diffusion coefficients on different surfaces. The numerical results agree excellently with the experimental observations and allow us to deduce the different diffusion lengths. This work facilitates the understanding of surface diffusion processes in area-selective deposition, and enables the control of area-selective deposition on small scales.