Dresden 2020 – scientific programme
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O: Fachverband Oberflächenphysik
O 46: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)
O 46.3: Talk
Tuesday, March 17, 2020, 14:30–14:45, POT 81
Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistors — •Aleksandar Matkovic1, Andreas Petritz2, Gerburg Schider2, Markus Krammer4, Markus Kratzer1, Michael Gärtner3, Andreas Terfort3, Christian Teichert1, Egbert Zojer4, Karin Zojer4, and Barbara Stadlober2 — 1Institute of Physics, Montanuniversität Leoben, Leoben, Austria. — 2Joanneum Research MATERIALS, Institute for Surface Technologies and Photonics, Weiz, Austria. — 3Institute of Solid State Physics, Graz University of Technology, Graz, Austria. — 4Institut für Anorganische und Analytische Chemie, Goethe-University Frankfurt, Frankfurt am Main, Germany.
This study aims at direct determination of the contact resistance in MoS2-based thin film transistors (TFTs). Exfoliated single-crystal flakes of MoS2 have been used in a bottom-contact TFT configuration. Pyrimidine-containing self-assembled monolayers (SAMs) were employed to tune the work function of gold electrodes. Kelvin probe force microscopy measurements were carried out during operation of the devices in order to directly image potential drops across the channel and to study the influence of different SAM treatments on the contact resistance. By independently imaging potential drops at both, carrier injection and extraction points, we demonstrate the asymmetry of contact resistances in MoS2-based TFTs, as well as their non-linear and bias-dependent behavior.