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O: Fachverband Oberflächenphysik

O 46: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)

O 46.3: Vortrag

Dienstag, 17. März 2020, 14:30–14:45, POT 81

Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistors — •Aleksandar Matkovic¹, Andreas Petritz², Gerburg Schider², Markus Krammer⁴, Markus Kratzer¹, Michael Gärtner³, Andreas Terfort³, Christian Teichert¹, Egbert Zojer⁴, Karin Zojer⁴, and Barbara Stadlober² — ¹Institute of Physics, Montanuniversität Leoben, Leoben, Austria. — ²Joanneum Research MATERIALS, Institute for Surface Technologies and Photonics, Weiz, Austria. — ³Institute of Solid State Physics, Graz University of Technology, Graz, Austria. — ⁴Institut für Anorganische und Analytische Chemie, Goethe-University Frankfurt, Frankfurt am Main, Germany.

This study aims at direct determination of the contact resistance in MoS₂-based thin film transistors (TFTs). Exfoliated single-crystal flakes of MoS₂ have been used in a bottom-contact TFT configuration. Pyrimidine-containing self-assembled monolayers (SAMs) were employed to tune the work function of gold electrodes. Kelvin probe force microscopy measurements were carried out during operation of the devices in order to directly image potential drops across the channel and to study the influence of different SAM treatments on the contact resistance. By independently imaging potential drops at both, carrier injection and extraction points, we demonstrate the asymmetry of contact resistances in MoS₂-based TFTs, as well as their non-linear and bias-dependent behavior.