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O: Fachverband Oberflächenphysik

O 91: Poster Session - Semiconductor Substrates: Structure, Epitaxy and Growth

O 91.2: Poster

Mittwoch, 18. März 2020, 18:15–20:00, P2/1OG

Surface structure of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt¹, Pingo Mutombo², Theresa Berthold^1,3, Agnieszka Paszuk¹, Matthias Steidl¹, Gernot Ecke⁴, Andreas Nägelein¹, Christian Koppka^1,3, Oliver Supplie¹, Stefan Krischok^1,3, Oleksandr Romanyuk², Marcel Himmerlich^1,3,5, and Thomas Hannappel¹ — ¹Institut für Physik, Technische Universität Ilmenau PF 100565, 98684 Ilmenau — ²Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic — ³Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany — ⁴Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany — ⁵European Organization for Nuclear Research - CERN, 1211 Meyrin, Switzerland

The MOVPE-prepared GaP(111)B surface was studied by XPS, STM, LEED, AES and AFM as well as ab initio DFT. Deoxidation under TBP, followed by high-temperature annealing under pure hydrogen results in the formation of Ga-rich islands, whereas the regions in between are atomically flat. Atomically resolved STM of these regions shows a largely disordered surface, but small units of (2 × 2), c(4 × 2), and ( 3 × 3)R30^∘ordering can be identified. According to DFT calculations, these are the most favorable reconstructions under hydrogen-rich conditions. We conclude that STM images the dangling bonds of an otherwise hydrogen-terminated phosphorus face.