SKM 2023 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 10: Layer Properties II

DS 10.4: Vortrag

Mittwoch, 29. März 2023, 11:45–12:00, SCH A 316

On the influence of the cation composition in reactively co-sputtered Ag_xCu_1−xI thin films: Characterization of electrical, optical and structural properties — •Sofie Vogt, Christiane Dethloff, Jorrit Bredow, Tillmann Stralka, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut, Germany

CuI and its alloys are promising transparent p-type materials for complementary transparent devices. Polycrystalline thin films exhibit hole mobilities of about 19 cm²V⁻¹s⁻¹, which is comparable to the electron mobility of commercially used indium-gallium-zinc-oxide thin films^[1,2]. It has been shown that alloying CuI with Ag leads to a transition from p-type material to n-type material for x≈ 0.5^[3]. This paves the way for Ag_xCu_1−xI/Ag_yCu_1−yI based homojunction diodes. We present reactively co-sputtered Ag_xCu_1−xI thin films in a range of 0.01 ≤ x ≤ 0.86. The thin films were deposited on glass substrates and crystallized in the γ-phase up to x≤ 0.67 and exhibit an additional AgI phase for higher Ag contents. An increase of the thin film resistivity from 2×10⁻⁴ Ωm to 30 Ωm was achieved by increasing the silver content from x=0.01 to x=0.67. All thin films are transparent in the visible light range and the expected decrease of the exciton binding energy up to x≈ 0.5 is observed, above which it remains constant.

^[1] C. Yang et al., ACS Appl. Electr. Mater., 2, 3627-3632, 2020.
^[2] S. Yang et al., IEEE Electron Device Lett., 32 (12), 1692-1694, 2011.
^[3] A. Annadi et al., Appl. Mater. Today, 20, 100703, 2020.