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HL: Fachverband Halbleiterphysik

HL 14: 2D Materials III (joint session HL/CPP)

HL 14.7: Vortrag

Dienstag, 28. März 2023, 11:15–11:30, POT 81

Atomic layer deposition of horizontal and vertical MoS₂/WS₂ heterostructures — •Christian Tessarek, Tim Grieb, Andreas Rosenauer, and Martin Eickhoff — Institut für Festkörperphysik, Universität Bremen

Beyond the properties of single two-dimensional (2D) layers, heterostructures made of 2D transition metal dichalcogenides promise new properties based on moiré physics and interlayer excitons.

Vertical and horizontal MoS₂ and WS₂ heterostructures were grown by atomic layer deposition (ALD) and analyzed by Raman and photoluminescence spectroscopy. The influence of the the ALD growth sequence, i.e. MoS₂/WS₂ vs. WS₂/MoS₂, was investigated. Elemental distribution of Mo and W in a horizontal heterostructure was studied by high resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Additional high temperature annealing was performed to improve the structural and optical properties of the layers.