SKM 2023 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 64: Poster: Graphene
O 64.10: Poster
Mittwoch, 29. März 2023, 18:00–20:00, P2/EG
Controlled fabrication of the graphene/Mn5Ge3 interface via Mn intercalation — •Vivien Enenkel1, Yuriy Dedkov2, Elena Voloshina2, and Mikhail Fonin1 — 1Fachbereich Physik, Universität Konstanz, Universtätsstraße 10, 78457 Konstanz, Germany — 2Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, China
Mn-based intermetallic compounds have recently been in focus of intensive research owing to their outstanding magnetic properties. In particular, epitaxial Mn5Ge3/Ge interfaces [1] are regarded to have the potential for the realization of efficient spin injection and manipulation in semiconductor structures compatible with the existing Si technology. Furthermore, for graphene on Mn5Ge3 an exchange splitting of the π states is predicted, with the two spin channels exhibiting a large difference in charge carrier mobility [2]. Here, we report on the fabrication of epitaxial graphene/Mn5Ge3 by Mn-intercalation at the graphene/Ge(110) interface, initially prepared by atomic carbon deposition on Ge(110) [3]. Depending on the sample temperature different phases can be generated, including Mn5Ge3, whose structure and electronic properties are studied by low-temperature scanning tunneling microscopy and spectroscopy.
[1] Y. Dedkov et al., J. Appl. Phys. 105, 073909 (2009).
[2] E. Voloshina and Y. Dedkov, J. Phys. Chem. Lett. 10, 3212 (2019).
[3] J. Tesch et al., Carbon 122, 428-433 (2017).