SKM 2023 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 37: Ruthenates
TT 37.7: Vortrag
Mittwoch, 29. März 2023, 16:45–17:00, HSZ 201
Gate-controlled superconductivity in Sr2RuO4 — •Priyana Puliyappara Babu1, Roman Hartmann1, Rosalba Fittipaldi2, Antonio Vecchione2, Elke Scheer1, and Angelo Di Bernardo1 — 1University of Konstanz, 78457 Konstanz, Germany — 2University of Salerno, I-84084 Fisciano, Italy
The electrical field effect was believed to be inapplicable for superconductors until 2018 when it was found that the supercurrent Ic in nanowires can be controlled by the application of strong enough voltages to gate electrodes, which has been interpreted as field effect. This discovery has great potential in the future to build hybrid superconductor/semiconductor architectures which might serve reducing the increasing energy demands of modern supercomputers. The majority of observations of such gate effects have been made for BCS superconductors like Ti, Va, Nb, Al etc. Here we report gate control of Ic in transistors made of Sr2RuO4 flakes. Sr2RuO4 is an unconventional superconductor found in 1994 which has been intensively studied to understand the nature of its superconducting order parameter. Single crystals of Sr2RuO4 were mechanically exfoliated to produce flakes which were then patterned into gated nanodevices using a gallium focused ion beam. Total suppression of Ic was observed for gate voltages VG above 8.3 V. The VG dependence of Ic at different temperatures and different fields were also investigated. We will also discuss the role of leakage currents between wire and gate and possibilities to further minimize them.