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DS: Fachverband Dünne Schichten
DS 10: Thin Film Application
DS 10.9: Talk
Wednesday, March 20, 2024, 17:15–17:30, A 060
Growth study of β-Ga2O3 on Ru(0001) substrates for resistive switching applications — •Aman Baunthiyal, Martin Williams, Alexander Karg, Marco Schowalter, Thorsten Mehrtens, Martin Eickhoff, Andreas Rosenauer, Jon-Olaf Krisponeit, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany
β-Ga2O3 is in demand for high-power electronics, sensors, and UV devices. While Al2O3 and AlN are common substrates, this study aims for a metallic substrate serving as bottom electrode in vertically stacked resistive switching (RS) devices [1]. Here, we utilize Ru, which is also considered a promising replacement for Cu interconnects in CMOS technology due to its stable resistivity at high temperatures and excellent electromigration resistance.
After sputter deposition of Ru(0001) on Al2O3(0001) substrates at 450 ∘C, the subsequent growth of Ga2O3 was systematically studied with respect to growth temperature (room temperature to 600 ∘C) and film thickness. Raman spectroscopy unveiled that the growth of β-Ga2O3 growth starts at 200∘C. Atomic force microscopy revealed an initial increase in roughness up to 400 ∘C and indicates a transition to a two-dimensional growth mode in the upper-temperature range. Finally, RS devices were created by deposition of Al top electrodes, featuring excellent stability with a consistent ON/OFF ratio exceeding >104 over extended retention and endurance cycles.
[1] Baunthiyal et al., Appl. Phys. Lett. 123, 213504 (2023).
Keywords: Resistive switching; 𝛽-Ga2O3; RF Sputtering; Non-volatile memories; Metal oxide growth