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Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Oxide Semiconductors I

HL 25.10: Talk

Wednesday, March 20, 2024, 12:15–12:30, ER 325

Tailoring analog TiN/SiOx/Cu/SiOx/TiN memristive devices through experiments and simulations — •Rouven Lamprecht1, Tobias Gergs2, Luca Vialetto2, Finn Zahari1, Richard Marquardt1, Jan Trieschmann2, and Hermann Kohlstedt11Chair of Nanoelectronics, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Germany — 2Chair of Theoretical Electrical Engineering, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Germany

Memristive devices for neuromorphic circuits are an emerging nano-technology promising for bioinspired computing architectures. Due to their voltage-dependent change in resistance, memristive devices can be considered as electronic pendants to synapses in the nervous system. In this study, we combine an experimental and modeling approach to systematically characterize the electrical properties of memristive devices, which were fabricated using different process methods with varying parameters. Experimental data provides local measurements of current-voltage (I-V) characteristics demonstrating analog switching of the TiN/SiOx/Cu/SiOx/TiN memristive devices. Monte Carlo simulations provide insights into the fabrication conditions by modeling the deposition source (thermal evaporation and magnetron sputtering) as well as the deposited thin film composition. As a result of the study, we correlate the measured electrical device properties with simulated deposition properties to provide insights into the key operational conditions influencing the memristive behavior.

Keywords: Memristive Device; Experiments; Simulations; SiOx; Analog

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