Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 25: Oxide Semiconductors I

HL 25.10: Vortrag

Mittwoch, 20. März 2024, 12:15–12:30, ER 325

Tailoring analog TiN/SiO_x/Cu/SiO_x/TiN memristive devices through experiments and simulations — •Rouven Lamprecht¹, Tobias Gergs², Luca Vialetto², Finn Zahari¹, Richard Marquardt¹, Jan Trieschmann², and Hermann Kohlstedt¹ — ¹Chair of Nanoelectronics, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Germany — ²Chair of Theoretical Electrical Engineering, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Germany

Memristive devices for neuromorphic circuits are an emerging nano-technology promising for bioinspired computing architectures. Due to their voltage-dependent change in resistance, memristive devices can be considered as electronic pendants to synapses in the nervous system. In this study, we combine an experimental and modeling approach to systematically characterize the electrical properties of memristive devices, which were fabricated using different process methods with varying parameters. Experimental data provides local measurements of current-voltage (I-V) characteristics demonstrating analog switching of the TiN/SiO_x/Cu/SiO_x/TiN memristive devices. Monte Carlo simulations provide insights into the fabrication conditions by modeling the deposition source (thermal evaporation and magnetron sputtering) as well as the deposited thin film composition. As a result of the study, we correlate the measured electrical device properties with simulated deposition properties to provide insights into the key operational conditions influencing the memristive behavior.

Keywords: Memristive Device; Experiments; Simulations; SiOx; Analog