Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MM: Fachverband Metall- und Materialphysik
MM 22: Interface Controlled Properties, Nanomaterials and Microstructure Design III
MM 22.2: Talk
Tuesday, March 19, 2024, 10:30–10:45, C 230
A theoretical analysis on the bulk photovoltaic effect in strained germanium microstructures — •Ignatii Zaitsev1, Davide Spirito1, Jacopo Frigerio2, Carlos Alvarado Chavarin1, Michele Virgilio3, Anke Lüdge4, Wolfgang Lüdge4, Raffaele Giani2, and Costanza Lucia Manganelli1 — 1IHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany — 2L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Di Como, Italy — 3Università di Pisa, Pisa, Italy — 4LPCon GmbH, Berlin, Germany
Strain engineering in microstructures is a powerful tool for optimization of electronic and optical properties in semiconductor devices. We propose a proof of concept for the development of a cost-effective, compact, fast, and non-destructive approach to probe non-uniform strain fields in semiconductors, exploiting the bulk photovoltage effect. We show a benchmark case represented by an array of silicon nitride stripes deposited at different pressure conditions on a germanium substrate. First, we verify their surface deformations by means of Raman spectroscopy; secondly, we reproduce that in a finite element method simulation platform by combining mechanical simulations with deformation potential theory to then estimate the band edge energy landscape. Finally, we discuss theoretical behavior of the photovoltage signal based on the semiconductor sample characteristics such as defects and doping as well as deformation.
Keywords: Electronic band structure; Semiconductor materials; Strain measurement; Finite-element analysis; Photovoltaic effects