Berlin 2024 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 24: Transport in Materials: Diffusion, Conduction of Charge or Heat II

MM 24.5: Vortrag

Dienstag, 19. März 2024, 12:45–13:00, C 264

Exploring the tunability of the electronic properties of ZrSiSe — •Davide Pizzirani^1,2, Oleksandr Zheliuk^1,2, Julia Kreminska³, Pim van den Berg^1,2, Claudius Müller^1,2, Maarten van Delft^1,2, Ratnadwip Shinga⁴, Yu-Te Hsu^1,2, Leslie Schoop⁴, Justin Ye³, Nigel Hussey^1,2,5, and Steffen Wiedmann^1,2 — ¹HFML-FELIX, Radboud University, 6525 ED Nijmegen, the Netherlands. — ²Institute for Molecules and Materials, Radboud University, Nijmegen 6525AJ, the Netherlands. — ³Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, the Netherlands. — ⁴Department of Chemistry, Princeton University, Princeton, NJ 08544, USA. — ⁵H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom.

The interplay of topology and electronic correlations, as well as the transport properties of charge carriers with a linear dispersion, can be unraveled in nodal line semi-metals, such as ZrSiSe. We present thickness- and gate-dependent magneto-transport experiments up to 35 T on exfoliated high-quality thin flakes of ZrSiSe, with sample thicknesses ranging from 112 to 27 nm. In order to further investigate the tunability of the charge carrier properties in ZrSiSe, we additionally employ the ionic-liquid gating technique. As a function of thickness and applied gate voltage, we observe strong deviation from the quadratic magneto-resistance expected for compensated semimetals as well as an alteration of the Fermi surface, evidenced by a shift in the quantum oscillation spectra.

Keywords: topological materials; fermi surface; magneto-transport experiments; low temperature; high magnetic fields