Berlin 2024 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 24: Transport in Materials: Diffusion, Conduction of Charge or Heat II
MM 24.5: Talk
Tuesday, March 19, 2024, 12:45–13:00, C 264
Exploring the tunability of the electronic properties of ZrSiSe — •Davide Pizzirani1,2, Oleksandr Zheliuk1,2, Julia Kreminska3, Pim van den Berg1,2, Claudius Müller1,2, Maarten van Delft1,2, Ratnadwip Shinga4, Yu-Te Hsu1,2, Leslie Schoop4, Justin Ye3, Nigel Hussey1,2,5, and Steffen Wiedmann1,2 — 1HFML-FELIX, Radboud University, 6525 ED Nijmegen, the Netherlands. — 2Institute for Molecules and Materials, Radboud University, Nijmegen 6525AJ, the Netherlands. — 3Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, the Netherlands. — 4Department of Chemistry, Princeton University, Princeton, NJ 08544, USA. — 5H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom.
The interplay of topology and electronic correlations, as well as the transport properties of charge carriers with a linear dispersion, can be unraveled in nodal line semi-metals, such as ZrSiSe. We present thickness- and gate-dependent magneto-transport experiments up to 35 T on exfoliated high-quality thin flakes of ZrSiSe, with sample thicknesses ranging from 112 to 27 nm. In order to further investigate the tunability of the charge carrier properties in ZrSiSe, we additionally employ the ionic-liquid gating technique. As a function of thickness and applied gate voltage, we observe strong deviation from the quadratic magneto-resistance expected for compensated semimetals as well as an alteration of the Fermi surface, evidenced by a shift in the quantum oscillation spectra.
Keywords: topological materials; fermi surface; magneto-transport experiments; low temperature; high magnetic fields