Berlin 2024 – scientific programme
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O: Fachverband Oberflächenphysik
O 29: Poster: 2D Materials
O 29.5: Poster
Tuesday, March 19, 2024, 12:30–14:30, Poster A
Facile chemical vapor deposition growth of transition metal dichalcogenide alloy lateral heterostructures for electronic and optoelectronic applications — Seung Heon Han1, Gia Quyet Ngo2, Moritz Quincke3, Emad Najafidehaghani1, •Christof Neumann1, Uwe Hübner4, Ute Kaiser3, Falk Eilenberger2,5, Antony George1, and Andrey Turchanin1 — 1Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743 Jena — 2Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena — 3Central Facility of Electron Microscopy, Ulm University, 89081 Ulm — 4Leibniz Institute of Photonic Technology (IPHT), 07745 Jena — 5Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, 07745 Jena
Lateral heterostructures (LH) of monolayer transition metal dichalcogenides (TMDs) such as MoS2, WSe2 are known for their high potential for the integration in ultrathin device technology as p-n junction diodes and photodetectors. While the properties of pure TMDs are noteworthy, the development of alloy TMDs (e.g., MoxW(1−x)S2 etc.) adds a new dimension to the research on 2D semiconductors. Alloy TMDs allow for the fine-tuning of their intrinsic electronic properties, thereby expanding the spectrum of potential applications. Here we present the growth of monolayer alloy LHs by CVD employing liquid precursors of transition metals. We characterized the synthesized material by AFM, Raman spectroscopy, HRTEM, as well as, PL spectroscopy and studied their performance in optoelectronic devices.
Keywords: 2D Materials; Lateral Heterostructure; CVD; Optoelectronic; Transition metal dichalcogenide