Regensburg 2025 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 21: Interface Controlled Properties, Nanomaterials and Microstructure Design

MM 21.4: Vortrag

Mittwoch, 19. März 2025, 16:30–16:45, H22

Optical and electrical properties of borophene and borophene/silicon junction — •yaser abdi^{1, 2}, masoud taleb¹, alireza eskandari², zahra alavi², mohsen moayedi², and nahid talebi¹ — ¹Institute of Experimental and Applied Physics, Kiel University, 24118 Kiel, Germany — ²Department of Physics, University of Tehran, 1439955961 Tehran, Iran

Borophene, a 2D monolayer of boron atoms, possesses unique properties that have led scientists to conclude that it could be an excellent alternative to graphene in future electronic device applications. In this talk, which is based on our recent work on synthesis [1] and characterization [2] of optical [3] and electrical properties of borophene and borophene/silicon Schottky junction, I will discuss about the growth of borophene using a chemical vapor deposition approach and investigation of its optical and electrical behaviors. Leveraging advanced deep-subwavelength cathodoluminescence spectroscopy, we reveal the extreme anisotropic optical response of borophene in the visible range[3]. Finally, direct growth of borophene on silicon to make Schottky junction will be explained and some opto-electrical measurements will be presented. The optoelectronic response of a borophene/silicon-based detector is approximately ten times higher than that of detectors fabricated by transferring 2D materials onto silicon, due to the excellent junction formed by the direct growth of borophene on silicon.

[1] ACS Applied Materials & Interfaces 2021 13 (7), 8844-8850 [2] ACS Applied Nano Materials 2024 7 (11), 13712-13719 [3] arXiv preprint arXiv:2404.13609v2

Keywords: Borophene; 2d Material; Electrical junction; Plasmon; optoelectronic