Regensburg 2025 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 67: Ultrafast Electron Dynamics II

O 67.8: Vortrag

Mittwoch, 19. März 2025, 16:45–17:00, H11

Light-induced hidden state studied by ultrafast angle-resolved photoemission spectroscopy — •Junde Liu¹, Pei Liu³, Liu Yang³, Sung-Hoon Lee⁴, Mojun Pan², Famin Chen², Jierui Huang², Bei Jiang², Mingzhe Hu², Yuchong Zhang², Zhaoyang Xie³, Gang Wang³, Mengxue Guan³, Wei Jiang³, Huaixin Yang², Jianqi Li², Chenxia Yun², Zhiwei Wang³, Sheng Meng², Yugui Yao³, Tian Qian², and Xun Shi³ — ¹University of Göttingen, I. Physikalisches Institut, Germany — ²Institute of Physics, Chinese Academy of Sciences, Beijing, China — ³Beijing Institute of Technology, Beijing, China — ⁴Kyung Hee University, Yongin, Republic of Korea

The non-volatile and ultrafast optical manipulation of material properties offers profound insights into light-matter interactions and holds great potential for optoelectronic applications. However, the discovery of such transitions is often serendipitous, and their practical implementation remains limited, underscoring the need for systematic investigation. In this talk, I will focus on laser-induced nonvolatile phase transitions in transition metal dichalcogenides (TMDs), highlighting the critical role of interlayer order in the formation of hidden states. By employing ultrafast laser excitations (single-pulse writing, pulse-train erasing and pulse-pair control), systematic angle-resolved photoemission spectroscopy (ARPES) characterizations, and comparative density functional theory (DFT) calculations, I aim to unravel the mechanisms that form and stabilize these hidden states, paving the way for novel methods to optically control low-dimensional materials.

Keywords: ultrafast ARPES; TMDs; Strongly correlated; photo-induced phase transition